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AEGIS
SEMICONDUTORES LTDA.
A1A:260.XX
VOLTAGE RATINGS
Part Number A1A:260.02 A1A:260.04 A1A:260.06 A1A:260.08 A1A:260.10 A1A:260.12 A1A:260.14 A1A:260.16 VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 180 C 200 400 600 800 1000 1200 1400 1600
O
VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 180 C 300 500 700 900 1100 1300 1500 1700
O
This datasheet applies to: Metric thread: A1A:260.XX, A1B:260.XX Inch thread: A2A:260.XX, A2B:260.XX
TJ = -40 to 0OC 200 400 600 800 1000 1200 1400 1600
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 180 -40 to 180 260 125 530 5046 IFSM Max. Peak non-rep. surge current 5500 A 6000 6540 116 126 I2t Max. I2t capability 163 178 It
2 1/2
O
UNITS
O O
NOTES O 180 half sine wave
C C A C A 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms
IF(RMS) Nom. RMS current
O Initial T J = 180 C, rated VRRM applied after surge.
O Initial T J = 180 C, no voltage applied after surge.
Initial T J = 180 C, rated VRRM applied after surge. Initial T J = 180 C, no voltage applied after surge.
O
O
kA2s
t = 8.3 ms t = 10ms
Max. I t
2 1/2
capability
1350 30(~267)
t = 8.3 ms O Initial T J = 180 C, no voltage applied after surge. kA2s1/2 N.m(Lbf.in) I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
F Mounting Force
AEGIS
SEMICONDUTORES LTDA.
A1A:260.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO) Threshold voltage rF1 Forward slope resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------TYP. 1.15 ----10 --------MAX. UNITS 1.37 0.82 0.45 15.00 0.20 0.20 0.24 0.03 V V mW mA
O O O
TEST CONDITIONS Initial T J = 25 OC, sinusoidal wave, Ipeak = 440A. TJ = 180OC, Av. Power = V F(TO)*IF(AV) +rF*[IF(RMS)]2, sine. Use low values for IFM < pIF(AV) TJ = 180 OC. Max. Rated VRRM
C/W DC operation C/W 180O sine wave C/W 120O rectangular wave C/W Mtg. Surface smooth, flat and greased. Single side. -----
O
----250(8.75) DO-205AB (DO-9)
g(oz.) JEDEC
Maximum Allowable Case Temperature
190
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C)
180 170 160 150 140 130 120 110 100 90 80 0
*Sinusoidal Waveform
180
160
140
30
30 60 90 120 180
120
60 90
100
120 180 DC
80 0 50 100 150 200 250 300 350 400 450
100
200
300
Average Forward Current (A)
*Rectangular Waveform
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:260.XX
Maximum Average Forward Power Loss
Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W)
2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 50 100 150 200 250 300 350 400 450 500 550
*Sinusoidal Waveform
Maximum Average Forward Power Loss
30
2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 50 100 150 200 250 300 350 400 450 500
30
60
60
90 120 180 DC
90 120 180
550
*Rectangular Waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Forward Voltage Drop
Transient Thermal Impedance (C/W)
Transient Thermal Impedance vs. Time
0.25 Rthjh
Forward Current (A)
1000
0.20
Rthjc
0.15
100
0.10
10
125C
25C
0.05
1 0.5 1.0 1.5 2.0 2.5
0.00 1E-3
0.01
0.1
1
10
100
Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:260.XX
DO-205AB (DO-9)

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